论文标题
在多功能Cu-SN-S3三元通导薄膜中,第二和第三次谐波生成的战略改进
Strategic improvement of second and third harmonic generation in multifunctional Cu-Sn-S3 ternary semiconducting thin films
论文作者
论文摘要
我们提出了一种低成本方法,用于通过喷雾热解技术合成多功能CUSNS3(CTS)三元化合物薄膜。通过不同的SN和S掺杂浓度,将高能吸收器层的CUSNS3薄膜层沉积在玻璃基板上,在405 C的底物温度下。对其光学,结构,结构和电气和非线性光学特性进行了分析制备的样品。 X射线衍射(XRD)分析表明,膜表现出具有沿着(1 1 1 2)的优先生长取向的四方晶体结构。通过敲击模式构型,通过原子力显微镜(AFM)探索了膜的表面形态。对于不同的SN和S组合,观察到载体电荷密度和电性能的变化。对拉曼光谱的分析表明,除了CUSNS3外,还存在多个阶段。根据光学和声学模式的区域中心声子表示,获得的拉曼光谱被分配到声子模式,并确定为对称模式。在CTS 3膜和相应的二阶非线性光学敏感性中,观察到最大激光刺激的诱导的第二个谐波生成(SHG)信号,在1064 nm时等于0.89 pm/v,发现CTS 2膜的最小SHG信号(约为0.22 pm/v)。 SHG和第三次谐波生成(THG)信号效率的战略改进认可SN和S在调节CUSNS3化合物中的第二和第三次谐波世代中的作用。
We propose a low-cost approach for the synthesis of multifunctional CuSnS3 (CTS) ternary compound thin film via spray pyrolysis technique. By varying Sn and S doping concentrations, a high energy absorber layers of CuSnS3 thin films were deposited on a glass substrate at a substrate temperature of 405 C. The prepared samples were analysed with respect to their optical, structural and electrical and nonlinear optical properties. X-Ray diffraction (XRD) analysis reveals that the films exhibit a tetragonal crystal structure with a preferential growth orientation along (1 1 2). The surface morphology of the films was explored by atomic force microscopy (AFM) in tapping mode configuration. Variation in the carrier charge density and electrical properties were observed for different Sn and S combination. The analysis of the Raman spectra indicates the presence of multiple phases apart from CuSnS3. The obtained Raman spectra were assigned to phonon mode as per zone centre phonon representation of optical and acoustic modes and identified to dominant A symmetry modes. The maximal laser stimulated induced second harmonic generation (SHG) signal was observed for the CTS 3 film and the corresponding second order nonlinear optical susceptibility which was equal to about 0.89 pm/V at 1064 nm and the minimal SHG signal was found for the CTS 2 film (about 0.22 pm/V). This strategic improvement in SHG and third harmonic generation (THG) signal efficiency endorses the role of Sn and S in modulating second and third harmonic generations in CuSnS3 compound.