论文标题
从CVD生长<400>单晶钻石纳米木中的轻萃取。选择性充电状态操作使用0V SF6等离子体
Light extraction from CVD-grown <400> single crystal diamond nanopillars. Selective charge state manipulations with 0V SF6 plasma
论文作者
论文摘要
我们研究了实现单晶钻石(SCD)纳米木的光萃取的可能性。这是通过专用于519 nm激光诱导的带负电荷的氮空位(NV-)的自旋状态的。我们首次提出了对NV( - )进行有效旋转的可能性,而NV( - )在SCD内化学蒸气沉积(CVD)合成过程中自然产生的NV( - )s,而没有任何后生长植入策略。施用的钻石既没有植入14N+,也没有合成CVD的SCD退火,使氮空位的存在成为显着的现象。 To investigate the possibility to realize light extraction by the utilization of NV(-) bright photoluminescence at room temperature and ambient conditions with the waveguiding effect, we have performed a top-down nanofabrication of SCD by electron beam lithography (EBL) and dry inductively-coupled plasma/ reactive ion etching (ICP-RIE) to generate light focusing nanopillars.此外,我们通过专用的0V ICP等离子体使钻石表面氟。使用光致发光(PL)光谱进行光萃取和自旋操作,并在室温下进行光学检测到的磁共振(ODMR)。我们观察到了基于选择性0V SF6等离子体蚀刻的显着效果,而且与文献发现相反,NV( - )中心的失活相反。我们将详细讨论有关二维孔气(2HG)和费米带弯曲的可能停用机制。
We investigate the possibilities to realize light extraction from single crystal diamond (SCD) nanopillars. This was achieved by dedicated 519 nm laser-induced spin-state initiation of negatively charged nitrogen vacancies (NV-). For the first time, we present possibility to perform effective spin-readout of NV(-)s that were naturally generated by the growth process during chemical vapor deposition (CVD) synthesis within SCD without any post-growth implantation strategies. Applied diamond was neither implanted with 14N+, nor was the CVD synthesized SCD annealed, making the presence of nitrogen vacancy a remarkable phenomenon. To investigate the possibility to realize light extraction by the utilization of NV(-) bright photoluminescence at room temperature and ambient conditions with the waveguiding effect, we have performed a top-down nanofabrication of SCD by electron beam lithography (EBL) and dry inductively-coupled plasma/ reactive ion etching (ICP-RIE) to generate light focusing nanopillars. In addition, we have fluorinated the diamond's surface by dedicated 0V ICP plasma. Light extraction and spin manipulations were performed with photoluminescence (PL) spectroscopy and optically detected magnetic resonance (ODMR) at room temperature. We have observed a remarkable effect based on the selective 0V SF6 plasma etching and surprisingly, in contrast to literature findings, deactivation of NV(-) centers. We discuss the possible deactivation mechanism in detail regarding 2-dimensional hole gas (2HG) and Fermi band bending.