论文标题
在Cu中的售价$σ$ 11 <110>倾斜晶粒边界中的方向性动物迁移率的出现
Emergence of directionally-anisotropic mobility in a faceted $Σ$11 <110> tilt grain boundary in Cu
论文作者
论文摘要
面晶界，晶粒边界面积以产生低能段的名义增加，可以表现出新的和意外的迁移趋势。例如，几个方面的$σ$ 3边界显示了反热和热阻尼的活动性。 $σ$ 11 <110>倾斜边界代表了另一个有前途但相对尚未开发的接口集，具有（113）的低能平面，可以导致方面。在这项研究中，分子动力学模拟用于研究在两种面中心金属中，不对称$σ$ 11 <110>晶粒边界的晶界迁移。 CU中该边界的迁移率很大程度上取决于所施加驱动力的方向。迁移率各向异性通常会变小，但随着温度升高而不会完全消失。相反，AL中的相同边界在任一方向上都表现出相似的迁移率，这表明各向异性迁移率现象是材料依赖性的。最后，发现堆叠断层能量，方面连接缺陷含量和边界晶体学之间的关系，可能会为未来的晶粒边界研究提供信息。
Faceted grain boundaries, where grain boundary area is increased in the name of producing low-energy segments, can exhibit new and unexpected migration trends. For example, several faceted $Σ$3 boundaries have demonstrated anti-thermal and thermally damped mobility. $Σ$11 <110> tilt boundaries represent another promising but relatively unexplored set of interfaces, with a (113) low-energy plane that can lead to faceting. In this study, molecular dynamics simulations are used to study grain boundary migration of an asymmetric $Σ$11 <110> grain boundary in two face centered cubic metals. Mobility of this boundary in Cu is strongly dependent on the direction of the applied driving force. The mobility anisotropy generally becomes smaller, but does not disappear completely, as temperature is increased. In contrast, the same boundary in Al demonstrates similar mobilities in either direction, illustrating that the anisotropic mobility phenomenon is material-dependent. Finally, relationships between stacking fault energy, facet junction defect content, and boundary crystallography are uncovered that may inform future studies of faceted grain boundaries.
