论文标题
卤化铁中的抗铁磁量子旋转霍尔态
Antiferromagnetic quantum spin Hall states in iron halogenide
论文作者
论文摘要
众所周知，量子自旋大厅（QSH）绝缘子可以被视为具有相反局部磁矩的量子异常霍尔（QAH）绝缘子的两个副本。但是，到目前为止，几乎每个发现的QSH绝缘子都是非磁性半导体。由于每个副本的局部磁矩消失，QAH在这些QSH绝缘子中仅存在概念上。在这项工作中，我们通过固定双层QAH绝缘子来展示具有有限的局部磁力时刻的QSH状态结构。我们的明确结构受益于具有较大拓扑间隙的有效QAH模型，并得到一类二维铁磁材料的支持。我们的工作不仅验证了QSH和QAH的概念关系，而且还提供了一个理想的材料平台，用于实现反铁磁QSH状态，QHS状态在QAH和QSH状态之间非常可调，这是层数的函数。
It is widely known that quantum spin Hall (QSH) insulator can be viewed as two copies of quantum anomalous Hall (QAH) insulator with opposite local magnetic moments. However, nearly every QSH insulator discovered so far is a nonmagnetic semiconductor. Due to the vanishing local magnetic moment of each copy, the QAH states only conceptually exist in these QSH insulators. In this work, we show a realistic construction of QSH states with finite local magnetic moment by staking bilayer QAH insulators. Our explicit construction benefits from an effective QAH model with a large topological gap and is further supported by a class of two-dimensional ferromagnetic materials. Our work not only validates the conceptual relationship of QSH and QAH but also provides an ideal material platform for realizing antiferromagnetic QSH state which is highly tunable between QAH and QSH states as a function of the number of layers.
