论文标题
低功率开关的厚度控制的黑色磷隧道隧道场效应晶体管
Thickness-Controlled Black Phosphorus Tunnel Field-Effect Transistor for Low Power Switches
论文作者
论文摘要
晶体管的持续下降一直是成功开发当前信息技术的关键。但是，随着摩尔定律达到了局限性，迫切需要开发替代晶体管架构的发展。晶体管需要每次增加至少60 mV的转换电压，即每十年60 mV的亚阈值秋千（SS）（DEC）。广泛研究了替代性隧道场效应晶体管（TFET），以实现亚热SS和高i60（当前SS为60 mV/dec的电流）。杂结（HJ）TFET显示出提供高i60的希望，但是由于由不同材料构成的HJS中的界面问题，实验结果不符合理论期望。在这里，我们报告了一个天然的HJ-TFET，黑色磷的空间层厚度在没有界面问题的情况下。我们在电流的4-5 dec（ssave_4dec = 〜22.9 mV/dec和ssave_5dec = 〜26.0 mV/dec）的情况下实现了创纪录的平均SS值，并获得了记录高i60（i60 = 0.65-1 UA/UM），为在低功率开关中应用铺平了道路。
The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the development of alternative transistor architectures is urgently needed. Transistors require a switching voltage of at least 60 mV for each tenfold increase in current, that is, a subthreshold swing (SS) of 60 mV per decade (dec). Alternative tunnel field-effect transistors (TFETs) are widely studied to achieve a sub-thermionic SS and high I60 (the current where SS becomes 60 mV/dec). Heterojunction (HJ) TFETs show promise for delivering a high I60, but experimental results do not meet theoretical expectations due to interface problems in the HJs constructed from different materials. Here, we report a natural HJ-TFET with spatially varying layer thickness in black phosphorus without interface problems. We achieved record-low average SS values over 4-5 dec of current (SSave_4dec = ~22.9 mV/dec and SSave_5dec = ~26.0 mV/dec) with record-high I60 (I60 = 0.65-1 uA/um), paving the way for application in low-power switches.
