论文标题
面外磁各向异性在有序的fe $ _y $ n纳米晶体的合奏中嵌入了gan
Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe$_y$N Nanocrystals Embedded in GaN
论文作者
论文摘要
含有磁性纳米结构的相分开的半导体是实现高密度记录介质的相关系统。在这里，具有fe $ _y $ n嵌入式纳米晶体（NCS）\ textit {via} al $ _x $ _x $ ga $ _ {1-x} $ n缓冲液的受控应变工程与fe $ _y $ _y $ _y $ n嵌入式纳米晶体（NCS）\ textIt {a} al $ _x $ _x $ _ {1-x} $ n buffers at Al Al complation $ 0 <x_ \ x_ \ x_ \ nathrm {al} al} <41 $ \％pressed。通过在缓冲区中添加Al，发生了主要的pr素形状$ \ varepsilon $ -fe $ _3 $ nncs。已经以Al浓度为$ x_ \ mathrm {al} $ \，$ \ of $ \，5 \％结构属性---相位，形状，方向，以及嵌入式NC的空间分布与在GAN液相过程中生长的NC相比进行了修改。尽管立方$γ$' - ga $ _y $ fe $ _ {4-y} $ n纳米晶体的磁性易于轴，在$ x_ \ mathrm {alrm {al} = 0 \％$ buffer in-plans In-Pllane，$ x_ \ mathrm {al} = 0 \％$ buffer中Al $ _x $ ga $ _ {1-x} $ n缓冲液与$ [0001] $增长方向一致，从而导致了相当大的平面外电磁各向异性，并为基于基于硝酸盐的磁性纳米晶体的垂直记录提供了广泛的观点。
Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$δ$FeN layers with Fe$_y$N embedded nanocrystals (NCs) \textit{via} Al$_x$Ga$_{1-x}$N buffers with different Al concentration $0<x_\mathrm{Al}<41$\% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $\varepsilon$-Fe$_3$N NCs takes place. Already at an Al concentration $x_\mathrm{Al}$\,$\approx$\,5\% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals in the layer on the $x_\mathrm{Al} = 0\%$ buffer lies in-plane, the easy axis of the $\varepsilon$-Fe$_3$N NCs in all samples with Al$_x$Ga$_{1-x}$N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.
