论文标题
Terahertz的抽搐辐射
Terahertz radiation of jerk photocurrent
论文作者
论文摘要
我们计算GAA，SI和铁电单层GES，GESE，SNS和SNSE的混蛋电流张量。我们发现$ 10^{14} $ ma/v $^3 $ s $^2 $的峰值峰值在可见的能量频谱中的gaas和si，单层GES，GES，SNSE和SNS中的峰值较大。我们表明，该张量的详细知识及其在单层GES，GESE，SNSE和SNS中的较大价值，使得可以预测光电传输开关中产生的强烈Terahertz脉冲的旋转的幅度和旋转角度，并指向这些设备的其他功能。
We compute the jerk current tensor of GaAs, Si, and ferroelectric single-layer GeS, GeSe, SnS, and SnSe. We find peak values of the order of $10^{14}$ mA/V$^3$s$^2$ in GaAs and Si within the visible energy spectrum and an order of magnitude larger in single-layer GeS, GeSe, SnSe and SnS. We show that the detailed knowledge of this tensor and its large value in single-layer GeS, GeSe, SnSe and SnS make it possible to predict the magnitude and angle of rotation of polarization of intense terahertz pulses generated in photoconductive switches and point to alternative functionalities of these devices.
