论文标题
X射线和紫外线光谱学研究的外延FE/MGO/GAAS（001）隧道连接的带结构
Band structure of the epitaxial Fe/MgO/GaAs(001) tunnel junction studied by X-ray and ultraviolet photoelectron spectroscopy
论文作者
论文摘要
已经通过X射线和紫外光光谱测量值研究了外延FE/MGO/GAAS（001）隧道连接中的电子带结构。 MGO/GAAS异质结构上Fe的Schottky屏障高度（SBH）确定为3.3+-0.1EV，将FE Fermi水平设置为高于GAAS Valence频段最大值的0.3EV。该SBH也与MGO单晶的Fe测得的SBH完全相同。 Fe沉积后，在MGO和GAAS底层中未观察到带弯曲的变化。相反，AU和Al沉积会导致MGO和GAAS层中带弯曲的清晰变化。该效果被分析为MGO/GAAS界面处的缺陷状态的指纹。
The electronic band structure in the epitaxial Fe/MgO/GaAs(001) tunnel junction has been studied by X-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barrier height (SBH) of Fe on MgO/GaAs heterostructure is determined to be 3.3+-0.1eV, which sets the Fe Fermi level about 0.3eV above the GaAs valence band maximum. This SBH is also exactly the same as that measured from Fe on MgO monocrystal. After Fe deposition, no band bending change is observed in MgO and GaAs underlayers. On the contrary, Au and Al deposition lead to clear variation of the band bending in both MgO and GaAs layers. This effect is analyzed as a fingerprint of defects states at the MgO/GaAs interface.
