论文标题
fastdrain：在NVME存储堆栈中删除页面受害开销
FastDrain: Removing Page Victimization Overheads in NVMe Storage Stack
论文作者
论文摘要
主机端的页面受害可以轻松溢出SSD内部缓冲区，该缓冲区会干扰不同用户应用程序的I/O服务，从而降低用户级别的体验。为了解决这个问题，我们提出了FastDrain，这是OS内核和Flash固件的共同设计，以避免由页面受害引起的缓冲区溢出。具体而言，FastDrain可以检测一个触发点，在该触发点中，近距离的页面受害引入了SSD内部缓冲区的溢出。然后，我们的新闪存固件投机擦洗缓冲空间，以适应页面受害引起的请求。同时，我们的新OS内核设计通过考虑目标设备缓冲区状态来控制页面受害的流量，这可以进一步降低缓冲区溢出的风险。为了确保更多的缓冲区空间，我们还设计了一个延迟感知的FTL，该FTL仅将肮脏的数据转储到快速闪存页面上。我们的评估结果表明，与常规系统相比，FastDrain将用户应用程序的第99个响应时间减少了84％。
Host-side page victimizations can easily overflow the SSD internal buffer, which interferes I/O services of diverse user applications thereby degrading user-level experiences. To address this, we propose FastDrain, a co-design of OS kernel and flash firmware to avoid the buffer overflow, caused by page victimizations. Specifically, FastDrain can detect a triggering point where a near-future page victimization introduces an overflow of the SSD internal buffer. Our new flash firmware then speculatively scrubs the buffer space to accommodate the requests caused by the page victimization. In parallel, our new OS kernel design controls the traffic of page victimizations by considering the target device buffer status, which can further reduce the risk of buffer overflow. To secure more buffer spaces, we also design a latency-aware FTL, which dumps the dirty data only to the fast flash pages. Our evaluation results reveal that FastDrain reduces the 99th response time of user applications by 84%, compared to a conventional system.
