论文标题

Mapbi3薄膜中光电导率的极化起源

Polarization Origin of Photoconductivity in MAPbI3 Thin Films

论文作者

Saraf, Rohit, Saguy, Cecile, Maheshwari, Vivek, Elangovan, Hemaprabha, Ivry, Yachin

论文摘要

杂交霍顿钙钛矿(HHP)膜具有出色的光电特性。这些材料可用于高效的太阳能电池和光电传入技术。离子迁移和极化都被提出是增强光电活动的来源,但是这些有利的设备特性的确切起源仍然难以捉摸。在这里,我们结合了显微镜和设备尺度表征,以证明极化辅助的电导率控制薄HHP膜中的光电导率。在光和可变的温度条件下,导电原子力显微镜表明光电流是定向的,在四方到立方体转化时被抑制。据显示,基于极化的电导率通​​过光增强,而暗电导率则由非方向离子迁移主导,正如大规模设备测量值所证实的那样。遵循极化结构域的非挥发记忆性质,证明了光电传统的重新行为。了解HHP中光电活动的起源允许设计具有增强功能的设备,并为光电熟悉设备奠定了基础。

Hybrid-halide perovskite (HHP) films exhibit exceptional photo-electric properties. These materials are utilized for highly efficient solar cells and photoconductive technologies. Both ion migration and polarization have been proposed as the source of enhanced photoelectric activity, but the exact origin of these advantageous device properties has remained elusive. Here, we combined microscale and device-scale characterization to demonstrate that polarization-assisted conductivity governs photoconductivity in thin HHP films. Conductive atomic force microscopy under light and variable temperature conditions showed that the photocurrent is directional and is suppressed at the tetragonal-to-cubic transformation. It was revealed that polarization-based conductivity is enhanced by light, whereas dark conductivity is dominated by non-directional ion migration, as was confirmed by large-scale device measurements. Following the non-volatile memory nature of polarization domains, photoconductive memristive behavior was demonstrated. Understanding the origin of photoelectric activity in HHP allows designing devices with enhanced functionality and lays the grounds for photoelectric memristive devices.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源