论文标题
在硅中的旋转共振线路，与平面微孔子耦合
Spin resonance linewidths of bismuth donors in silicon coupled to planar microresonators
论文作者
论文摘要
在硅中旋转的其经二晶型量量子量的固定性时间超过秒，因此在微波量子量子上的储存元件是有希望的存储元素。操作有效的量子内存需要在旋转集合和合适的高质量因子谐振器之间实现关键的耦合 - 这反过来又需要对相关自旋共振过渡的线形有透彻的了解，尤其是考虑到谐振器本身对线路扩展的影响。在这里，我们介绍了天然硅中鞭毛供体的集合的脉冲电子自旋共振测量值，上面已经对niobium超导谐振器进行了图案。通过研究跨多个频率和磁场的自旋跃迁，我们确定了不同的线扩展机制，尤其是可以通过在磁场不敏感的“时钟过渡”下操作来抑制的线子。鉴于此处使用的供体浓度和谐振器，我们测量了一个合作性$ c \ sim 0.2 $，并根据我们的发现，我们根据量子内存的要求讨论了实现单位合作的途径。
Ensembles of bismuth donor spins in silicon are promising storage elements for microwave quantum memories due to their long coherence times which exceed seconds. Operating an efficient quantum memory requires achieving critical coupling between the spin ensemble and a suitable high-quality factor resonator -- this in turn requires a thorough understanding of the lineshapes for the relevant spin resonance transitions, particularly considering the influence of the resonator itself on line broadening. Here, we present pulsed electron spin resonance measurements of ensembles of bismuth donors in natural silicon, above which niobium superconducting resonators have been patterned. By studying spin transitions across a range of frequencies and fields we identify distinct line broadening mechanisms, and in particular those which can be suppressed by operating at magnetic-field-insensitive `clock transitions'. Given the donor concentrations and resonator used here, we measure a cooperativity $C\sim 0.2$ and based on our findings we discuss a route to achieve unit cooperativity, as required for a quantum memory.
