论文标题
连贯的GE（1-X）SN（X）/GE异质结构中载体寿命的磁光测定
Magneto-optical determination of the carrier lifetime in coherent Ge(1-x)Sn(x)/Ge heterostructures
论文作者
论文摘要
我们提出了一项对压缩性GE（1-X）SN（X）膜中载体动力学的磁光研究，其SN组成在SI（001）虚拟底物上的毯子GE上具有最高10％的外延生长。我们利用稳态激发下的Hanle效应来研究存在外部磁场的旋转依赖性光学转变。这使我们能够直接访问光学诱导的载体种群的动态。我们的方法指出，在低温温度下，相干GE（1-X）SN（X）中光生载体的有效寿命发生在子-NS时间尺度上。在辐射寿命的模型估计值的支持下，我们的测量表明载体重组由非辐射过程主导。因此，我们的结果提供了中心信息，以促进这种新型直接差距IV材料系统中对载体动力学的基本理解。这些知识可以是寻求GE（1-X）SN（X）基于功能设备的垫脚石。
We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under steady-state excitation to study the spin-dependent optical transitions in presence of an external magnetic field. This allowed us to obtain direct access to the dynamics of the optically-induced carrier population. Our approach singled out that at cryogenic temperatures the effective lifetime of the photogenerated carriers in coherent Ge(1-x)Sn(x) occurs in the sub-ns time scale. Supported by a model estimate of the radiative lifetime, our measurements indicate that carrier recombination is dominated by non-radiative processes. Our results thus provide central information to advance the fundamental understanding of carrier kinetics in this novel direct-gap group-IV material system. Such knowledge can be a stepping stone in the quest for the implementation of Ge(1-x)Sn(x)-based functional devices.
