论文标题
Wurtzite III-二硝酸盐分布于Si（100）底物的Bragg反射器
Wurtzite III-nitride distributed Bragg reflectors on Si (100) substrates
论文作者
论文摘要
Si（100）底物首次证明了由Aln/GAN超晶格组成的分布式Bragg反射器（DBR）。通过使用偏高的Si（100）晶片，表面正常指向[110]方向，在该立方基材上实现了单晶晶岩超晶格结构。这种不良取向引入了额外的外延约束，阻止了两域gan表面和立方GAN包含物的生长。证明了Si（100）上的无裂纹600 nm GAN CAP / 5X ALN / GAN DBR结构。 SI（100）上的Wurtzite III-氮化物DBR的成就开辟了将新颖的光学和光电设备与已建立的SI Microelectronics Technology整合在一起的可能性。
Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wafers with the surface normal pointing 4° towards the [110] direction. This misorientation introduced an additional epitaxial constraint that prevented the growth of a two-domain GaN surface as well as cubic GaN inclusions. A crack-free 600 nm GaN cap / 5x AlN / GaN DBR structure on Si (100) was demonstrated. This accomplishment of a wurtzite III-nitride DBRs on Si (100) opens the possibility to integrate novel optical and optoelectronic devices with established Si microelectronics technology.
