论文标题
MOS2量子点在水性介质中的广泛AS（III）上的独特光致发光响应
Unique photoluminescence response of MoS2 quantum dots over wide range of As (III) in aqueous media
论文作者
论文摘要
此处报道了基于MOS2的量子点（QD）和裸QD的性能评估，以在室温和中性pH下检测（III）氧化态在极宽的范围内（0.1 ppb至1000 ppb）。发现QD的浓度依赖性光致发光（PL）可增强高达50 ppb，然后抑制至1000 ppb，显示两个独特的斜率以增强和抑制。陷阱状态或QD缺陷的钝化可能是增强的可能原因，并且在QD表面上形成极小的玻璃状AS2S3颗粒可能是抑制的可能原因。 QD的光学吸收模式毫无特色，但显示出在300 nm以下的近紫外线范围内增强的吸光度，其随着AS（iii）浓度的增加高达50 ppb，然后在PL模式下降低。 MOS2 QD的特征是通过透射电子显微镜（TEM），XRAR衍射（XRD），UV-VIS和PL光谱法进行表征。改进和抑制结果可以很好地与修改后的船尾方程式一起拟合，并且使用这些线性拟合方程作为校准曲线，可以使用砷的检测。
Solvothermal synthesis of MoS2 based quantum dots (QDs) and the performance evaluation of bare QDs for the detection of aqueous As (III) oxidative state at room temperature and neutral pH over an extremely wide range (0.1 ppb to 1000 ppb) is reported here. Concentration-dependent photoluminescence (PL) of the QDs was found to be enhanced up to 50 ppb and then suppressed till 1000 ppb, showing two distinctive slopes for enhancement and suppression. Passivation of trap states or defects of QDs may be the possible reason for enhancement, and the formation of extremely small glassy As2S3 particles on the QD surface may be the possible reason for suppression. The pattern of optical absorption of QDs is featureless but shows an enhanced absorbance in the near UV range below 300 nm, which increases with As (III) concentration up to 50 ppb and then decreases following the PL pattern. The MoS2 QDs were characterized by transmission electron microscopy (TEM), Xray diffraction (XRD), UV-Vis, and PL spectroscopy. The enhancement and suppression results can be fitted excellently with the modified Stern-Volmer equation, and the detection of arsenic is possible using these linear fit equations as calibration curves.
