论文标题
识别li $ _ {\ text {ni}} $和v $ _ {\ text {ni}} $ confactor级别
Identification of Li$_{\text{Ni}}$ and V$_{\text{Ni}}$ acceptor levels in doped nickel oxide
论文作者
论文摘要
镍氧化物，特别是在其掺杂的半导体形式中，是几种光电设备的重要组成部分。通常是通过合并锂来实现兴奋剂Nio，它很容易占据Ni位点，从而产生Li $ _ {\ text {ni}} $受体，或者通过在Nio膜沉积过程中提供活性氧物种，从而导致Ni Vacies的形成（V $ _ {v $ _ MATHRM} $ {\ ni}。但是，直到今天，这些受体在NIO带隙中的能量位置尚未得到实验确定。在这项工作中，我们通过研究Nio在氟掺杂的氧化锡锡上的nio的n $^{++} $ phetojunctions来缩小这一知识差距。这些结构显示出足够的整流功能，可以通过缺陷光谱技术进行电动表征，特别是电容电压和热入学光谱。使用这些方法，（0/ - ）电荷过渡级别被确定为li $ _ {\ text {ni}} $和V $ _ {\ text {ni}} $接受者的价值频段边缘的190mev和409mev。
Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doping NiO is commonly achieved either by incorporation of lithium, which readily occupies Ni sites substitutionally, producing the Li$_{\text{Ni}}$ acceptor, or by supplying reactive oxygen species during NiO film deposition, which leads to the formation of Ni vacancies (V$_{\mathrm{Ni}}$). However, the energetic position of these acceptors in the NiO band gap has not been experimentally determined until today. In this work, we close this knowledge gap by studying rectifying n$^{++}$p heterojunctions of NiO on top of fluorine-doped tin oxide. These structures show sufficient rectification to perform electric characterization by defect spectroscopic techniques, specifically capacitance-voltage and thermal admittance spectroscopy. Using these methods, the (0/-) charge transition levels are determined to be 190meV and 409meV above the valence band edge for the Li$_{\text{Ni}}$ and the V$_{\text{Ni}}$ acceptor, respectively.
