论文标题
Fe，Mn和Cr掺杂的INSB，INA和GASB磁性半导体中高温铁磁磁性的微观机制
Microscopic mechanism of high-temperature ferromagnetism in Fe, Mn, and Cr-doped InSb, InAs, and GaSb magnetic semiconductors
论文作者
论文摘要
在最近的实验中，据报道，在铁磁半导体Fe掺杂的气体和INSB中，据报道，室温高于室温，而在其他具有相同晶体结构的其他半导体中也观察到低TC在20 K至90 K之间，包括Fe型INAS和MN型INAS和MN含量的Gasb，INSB，INSB，INSB和Inas和Inas。在这里，我们通过结合密度功能理论和量子蒙特卡洛的方法，系统地研究了Fe，MN，CR掺杂的气体，INSB和INAS磁性半导体的高温铁磁学的起源。在稀释的杂质极限中，计算表明杂质Fe，Mn和Cr在同一半导体中具有相似的磁相关性。我们的结果表明，在这些实验中获得的高（低）TC主要来自高（低）杂质浓度。此外，我们的计算预测了可能具有较高TC的Cr掺杂INSB，INA和GASB的铁磁半导体。我们的结果表明，（GA，Fe）SB和（IN，Fe）SB的高TC的起源不是由于FE3+不引入载体而引起的。
In recent experiments, high Curie temperatures Tc above room temperature were reported in ferromagnetic semiconductors Fe-doped GaSb and InSb, while low Tc between 20 K to 90 K were observed in some other semiconductors with the same crystal structure, including Fe-doped InAs and Mn-doped GaSb, InSb, and InAs. Here we study systematically the origin of high temperature ferromagnetism in Fe, Mn, Cr-doped GaSb, InSb, and InAs magnetic semiconductors by combining the methods of density functional theory and quantum Monte Carlo. In the diluted impurity limit, the calculations show that the impurities Fe, Mn, and Cr have similar magnetic correlations in the same semiconductors. Our results suggest that high (low) Tc obtained in these experiments mainly comes from high (low) impurity concentrations. In addition, our calculations predict the ferromagnetic semiconductors of Cr-doped InSb, InAs, and GaSb that may have possibly high Tc. Our results show that the origin of high Tc in (Ga,Fe)Sb and (In,Fe)Sb is not due to the carrier induced mechanism because Fe3+ does not introduce carriers.
