论文标题
在危害无序的Be-Al BiLayers中的自旋极化隧道
Spin-Polarized Tunneling in Critically Disordered Be-Al Bilayers
论文作者
论文摘要
我们报告了超薄Be-Be-Al BiLayers中接近度调制超导体 - 绝缘体转变的状态测量的自旋偏振隧道密度。双层样品由厚度变化的薄膜组成，$ d_ \ mathrm {be} = \，$ 0.8-4.5 nm，在其上沉积了1 nm厚的Al封盖层。在具有板电阻$ r \ sim h/4e^2 $样品中BCS相干峰的Zeeman分裂的详细测量结果显示，临界场附近的超级线性Zeeman偏移。我们的数据表明，严重无序的样本具有较大的间隙能量分布，并且只有在接近Zeeman临界场时，分布的较高部分才能生存。这会产生违反直觉的依赖性，其中差距显然随着平行场的增加而增加。
We report spin-polarized tunneling density of states measurements of the proximity modulated superconductor-insulator transition in ultra thin Be-Al bilayers. The bilayer samples consisted of a Be film of varying thickness, $d_\mathrm{Be}=\,$0.8-4.5 nm, on which a 1 nm thick capping layer of Al was deposited. Detailed measurements of the Zeeman splitting of the BCS coherence peaks in samples with sheet resistances $R\sim h/4e^2$ revealed a super-linear Zeeman shift near the critical field. Our data suggests that critically disordered samples have a broad distribution of gap energies and that only the higher portion of the distribution survives as the Zeeman critical field is approached. This produces a counter-intuitive field dependence in which the gap apparently increases with increasing parallel field.
