论文标题
在几个电子双层石墨烯双重量子点中可调的互头耦合
Tunable interdot coupling in few-electron bilayer graphene double quantum dots
论文作者
论文摘要
我们提出了基于双层石墨烯的高度可控的双量子点设备。使用相互插入的栅极手指的设备结构，我们可以控制1至4 GHz之间的互连隧道和0.2至0.6 MeV之间的相互电容耦合，而与量子点的电荷占用无关。充电能量和点大小几乎保持不变。隧道耦合的调谐范围涵盖了典型的硅和GAAS自旋量子设备的工作状态。
We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 to 4 GHz and the mutual capacitive coupling between 0.2 and 0.6 meV, independently of the charge occupation of the quantum dots. The charging energy and hence the dot size remains nearly unchanged. The tuning range of the tunnel coupling covers the operating regime of typical silicon and GaAs spin qubit devices.
