论文标题
多头rydberg量子逻辑门通过着装状态方案
Multiple-qubit Rydberg quantum logic gate via dressed-states scheme
论文作者
论文摘要
我们提出了一个方案，通过结合瑞德伯格原子中维塔诺夫风格的脉冲和穿着状态的快捷方式（STA）的优势来实现多头量子状态转移和量子逻辑门。可以通过通过STA技术减少Rydberg激发态的人口来实现自发排放方案的鲁棒性。同时，可以使用精心设计的脉冲可以最大程度地减少控制误差。此外，该方案中应用的着装状态方法使量子状态转移以高保真度更加顺利地打开或关闭，并且比传统快捷方式更快地打开或更快。通过使用rydberg抗块（RAB）效应，可以在参数的一般选择条件下构建多Qubit Toffoli Gate。
We present a scheme to realize multiple-qubit quantum state transfer and quantum logic gate by combining the advantages of Vitanov-style pulses and dressed-state-based shortcut to adiabaticity (STA) in Rydberg atoms. The robustness of the scheme to spontaneous emission can be achieved by reducing the population of Rydberg excited states through the STA technology. Meanwhile, the control errors can be minimized through using the well-designed pulses. Moreover, the dressed-state method applied in the scheme makes the quantum state transfer more smoothly turned on or off with high fidelity and also faster than traditional shortcut to adiabaticity methods. By using Rydberg antiblockade (RAB) effect, the multiple-qubit Toffoli gate can be constructed under a general selection conditions of the parameters.
