论文标题
光磁隧道连接的皮秒转换
Picosecond Switching of Optomagnetic Tunnel Junctions
论文作者
论文摘要
垂直磁性隧道连接是Spintronic记忆的构件之一，它允许快速的非挥发性数据访问，从而彻底改变了主流计算体系结构的巨大潜力。但是，此类设备的常规开关机制从根本上受到自旋极化电流4的阻碍，即自旋传输扭矩或自旋轨道扭矩，并具有自旋进液的时间限制和过度的功率耗散。这些物理约束显着刺激了现代旋转的发展。在这里，我们报告了使用Spintronic-Photonic组合的光磁隧道连接点。该复合设备结合了一个全面可切换的CO/GD双层，并通过Ruderman-Kittel-Kasuya-Yosida相互作用耦合到基于COFEB/MGO的垂直磁性隧道连接。通过时间分辨的测量值明确确认了光磁隧道连接的Picsecond全光操作。此外，该设备显示出相当大的隧道磁力耐药性和热稳定性。该概念验证设备代表了具有THZ数据访问以及超速功耗的超快自旋记忆的重要一步。
Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However, conventional switching mechanisms of such devices are fundamentally hindered by spin polarized currents4, either spin transfer torque or spin orbit torque with spin precession time limitation and excessive power dissipation. These physical constraints significantly stimulate the advancement of modern spintronics. Here, we report an optomagnetic tunnel junction using a spintronic-photonic combination. This composite device incorporates an all-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-based perpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosida interaction. A picosecond all-optical operation of the optomagnetic tunnel junction is explicitly confirmed by time-resolved measurements. Moreover, the device shows a considerable tunnel magnetoresistance and thermal stability. This proof-of-concept device represents an essential step towards ultrafast spintronic memories with THz data access, as well as ultralow power consumption.
