论文标题
沿氮掺杂钻石的氮呈直接形成沿迅速重离子的轨迹
Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions
论文作者
论文摘要
我们报告了深度分辨的光致发光测量测量的氮呈（NV $^ - $）中心，沿着IB型合成单晶钻石沿Swift重离子（SHIS）形成，在晶体生长过程中用100 ppm的氮掺杂。对光谱的分析表明，在电子停止过程占主导地位而不是在离子范围末端的区域内优先形成NV $^ - $中心，弹性碰撞会导致空缺和缺陷的形成。在空位密度较高的区域中，热力退火在辐射后进一步增加了NV的产量。沿单个Swift重离子轨道形成的NV中心可以使用出面的技术隔离，以探索准中心Quasi-1D寄存器中的颜色中心Qutbits，其平均数量量子间距的平均量子间距为几纳米，并且沿10至30微米的长度透明链沿10至30微米的每微米100级颜色中心。
We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV$^-$) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NV$^-$ centers are formed preferentially within regions where electronic stopping processes dominate and not at the end of the ion range where elastic collisions lead to formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHIs preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi-1D registers with an average qubit spacing of a few nanometers and of order 100 color centers per micrometer along 10 to 30 micrometer long percolation chains.
