论文标题

在超高质量的srRRUO3膜中,依赖厚度的量子转运

Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films

论文作者

Kaneta-Takada, Shingo, Wakabayashi, Yuki K., Krockenberger, Yoshiharu, Ohya, Shinobu, Tanaka, Masaaki, Taniyasu, Yoshitaka, Yamamoto, Hideki

论文摘要

最近观察到巡回4D铁磁钙钛矿srRUO3中的Weyl Fermions指出,这种材料是探索与外部外观异质结构中一对Weyl节点相关的新型物理学的好平台。在这封信中,我们报告了在SRTIO3底物上优化条件下生长的超高质量外延SRRUO3膜的厚度依赖性磁转移特性。在厚度小至10 nm的膜中观察到Weyl fermion转运的特征,即不饱和线性线性正磁磁性,并伴随具有π浆果相的量子振荡。残留电阻率随着膜厚度的减小而增加,表明在SRRUO3和SRTIO3底物之间的界面附近的无序。由于这种疾病会影响膜的磁性和电性能,因此库里温度降低,并且强制场随着厚度的减小而增加。厚度依赖性的磁转运测量表明,观察Weyl fermion运输的阈值残留电阻率(RRR)为21。这些结果为实现HeteroInterfaces附近SRRRUO3的量子运输提供了指南。

The recent observation of Weyl fermions in the itinerant 4d ferromagnetic perovskite SrRuO3 points to this material being a good platform for exploring novel physics related to a pair of Weyl nodes in epitaxial heterostructures. In this letter, we report the thickness-dependent magnetotransport properties of ultra-high-quality epitaxial SrRuO3 films grown under optimized conditions on SrTiO3 substrates. Signatures of Weyl fermion transport, i.e., unsaturated linear positive magnetoresistance accompanied by a quantum oscillation having a π Berry phase, were observed in films with thicknesses as small as 10 nm. Residual resistivity increased with decreasing film thickness, indicating disorder near the interface between SrRuO3 and the SrTiO3 substrate. Since this disorder affects the magnetic and electrical properties of the films, the Curie temperature decreases and the coercive field increases with decreasing thickness. Thickness-dependent magnetotransport measurements revealed that the threshold residual resistivity ratio (RRR) to observe Weyl fermion transport is 21. These results provide guidelines for realizing quantum transport of Weyl fermions in SrRuO3 near heterointerfaces.

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