论文标题
隐藏的量子大厅条纹中的$ _ {x} $ ga $ _ {1-x} $ as/al $ _ {0.24} $ ga $ _ {0.76} $ as Quantum Wells
Hidden Quantum Hall Stripes in Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As Quantum Wells
论文作者
论文摘要
我们在高（$ n> 2 $）的隐藏量子大厅条纹（HQHS）阶段的运输签名报告中报告Al $ _ {x} $ ga $ _ {1-x} $ as/al $ _ {0.24} $ _ {0.24} $ ga $ _ $ _ {0.76} $ as量子a $ aS量子{$ aS vary al mole fraction-3.0.24} $ _ {0.24} $ _ {0.24} $ _这些HQHS阶段在常规条纹阶段（较低$ n $）和各向同性液相（较高$ n $）之间居住，电阻率降低为$ 1/n $，具有各向同性和$ n $独立的电阻率。使用实验相图，我们确定条纹阶段比理论上预测更健壮，要求改善理论处理。我们还表明，与传统的条纹阶段不同，HQHS阶段在超高迁移率GAAS量子井中不会发生，但可能在其他系统中可以找到。
We report on transport signatures of hidden quantum Hall stripe (hQHS) phases in high ($N > 2$) half-filled Landau levels of Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum wells with varying Al mole fraction $x < 10^{-3}$. Residing between the conventional stripe phases (lower $N$) and the isotropic liquid phases (higher $N$), where resistivity decreases as $1/N$, these hQHS phases exhibit isotropic and $N$-independent resistivity. Using the experimental phase diagram we establish that the stripe phases are more robust than theoretically predicted, calling for improved theoretical treatment. We also show that, unlike conventional stripe phases, the hQHS phases do not occur in ultrahigh mobility GaAs quantum wells, but are likely to be found in other systems.
