论文标题

半导体纳米晶体中的电子,孔和激子有效的G因子

Electron, hole and exciton effective g-factors in semiconductor nanocrystals

论文作者

Semina, M. A., Golovatenko, A. A., Rodina, A. V.

论文摘要

我们回顾了现有的,并介绍了$ \ bf kp $的新结果,这些电子,孔和激子有效$ g $ - $ g $ - $ g $ - $ g $ factor在半导体纳米晶体中的不同形状和对称性。我们提出了一种简单而准确的方法,用于计算八波段kane模型中裸纳米晶体中电子$ g $因素的大小依赖性。使用球形近似,用于Luttinger Hamiltonian,我们发现$ g $ factor的依赖性对具有球形,轴向和立方体对称形状的半导体纳米结构中的光与重孔有效质量比。我们表明,在立方体和球形纳米晶体中可能发生四倍变性孔状态的非属性zeeman分裂。我们对基于II-VI和III-V半导体的纳米结构中计算出的孔$ g $ factor进行了比较,用于不同集的Luttinger参数,并分析了$ G $ FECTORS FECTACTOR RENARATION的主要效果,以$ G $ FECTORS的重新归一化以相对于大量值。我们讨论了在分析实验数据时应考虑的孔和激子$ g $因素的定义的不同方法,并将我们的$ G $因子计算结果与半导体球形纳米晶体的实验数据进行比较。

We review the existing and present the new results of $\bf kp$ calculations of the electron, hole, and exciton effective $g$-factors in semiconductor nanocrystals of different shape and symmetry. We propose a simple yet accurate method for calculation of electron $g$-factor size dependence in bare nanocrystals within the eight-band Kane model. Using the spherical approximation for Luttinger Hamiltonian we find the dependence of hole $g$-factor on light to heavy hole effective mass ratio in semiconductor nanostructures with spherical, axial, and cubically symmetric shape. We show that the non-equidistant Zeeman splitting of the four-fold degenerate hole state may take place in cube and spheroidal nanocrystals. We present a comparison of the calculated hole $g$-factors in nanostructures based on II-VI and III-V semiconductors for different sets of the Luttinger parameters and analyze the main effects contributing to the $g$-factor renormalization with the respect to the bulk value. We discuss different approaches to the definition of the hole and exciton $g$-factors which should be taken into account during the analysis of the experimental data and compare our results of $g$-factor calculations with the experimental data for semiconductor spherical nanocrystals and thin nanoplatelets available in the literature.

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