论文标题
平面GE中的单线三重孔旋转值
A singlet triplet hole spin qubit in planar Ge
论文作者
论文摘要
旋转量表被认为是建造量子处理器的最有希望的候选者之一。由于与SI技术的易于操作和兼容性,GroupIv Hole Spin Qubits已进入了感兴趣的焦点。此外,GE还提供了整体超导体 - 症状会整合的选项。在这里,我们通过利用平面GE中的大型平面外孔G因子和将值编码到双量子点的单元 - 三个态,在10 mt以下的临界场(AL的临界场)上进行了一个孔自旋量子置量。我们观察到电气控制的G因素 - 差异驱动和交换驱动的旋转,可调节频率超过100 MHz,并具有1 $μ$ s的dephasing时间,我们用回声技术延伸了150美元$μ$。这些结果表明,Ge Hole Singlet-Triplet Qubits正在与最先进的GAA和SI Singlet-Triplet Qubits竞争。此外,它们的旋转频率和连贯性与GE单个旋转量值相当,但是它们可以在较低的场上进行操作,从而强调了它们与超导技术的芯片积分的潜力。
Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor-difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 $μ$s which we extend beyond 150 $μ$s with echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are on par with Ge single spin qubits, but they can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies.