论文标题

钙钛矿氧氟化物膜中的应变诱导的阴离子订购

Strain-induced anion ordering in perovskite oxyfluoride films

论文作者

Wang, Jiayi, Shin, Yongjin, Paudel, Jay R., Grassi, Joseph D., Sah, Raj K., Yang, Weibing, Karapetrova, Evguenia, Zaidan, Abdulhadi, Strocov, Vladimir N., Klewe, Christoph, Shafer, Padraic, Gray, Alexander X., Rondinelli, James M., May, Steven J.

论文摘要

阴离子订购是在功能性杂材材料中设计物理特性的有前途的途径。对阴离子订购化合物的研究中的一个核心挑战在于开发坚固的合成策略来控制阴离子占用并理解所得的对电子结构的影响。在这里,我们表明,外延菌株会在钙钛矿氧氟化物srmno2.5-dfg膜上诱导F和O在不同底物上生长的薄膜的优先占用。在压缩应变下,F倾向于采用类似顶的位点,这是通过线性极化的X射线吸收光谱和密度功能理论计算得出的,从而揭示了f和o k边缘。在拉伸应变下,F倾向于采用赤道样位点,从而使较长的MN-F键位于平面内。阴离子有序的氧氟化物膜表现出3D电子的显着轨道极化,与赤道样位点相比,f占据顶端类阴离子位点时,F位置对其态的价带密度的不同依赖性,并且具有增强的电阻率。通过证明在氧氟化物钙钛矿中诱导阴离子位点的一般策略,这项工作为未来的材料设计和合成工作奠定了基础,以利用这种更大程度的原子控制来实现新的极性或准二维材料。

Anionic ordering is a promising route to engineer physical properties in functional heteroanionic materials. A central challenge in the study of anion-ordered compounds lies in developing robust synthetic strategies to control anion occupation and in understanding the resultant implications for electronic structure. Here, we show that epitaxial strain induces preferential occupation of F and O on the anion sites in perovskite oxyfluoride SrMnO2.5-dFg films grown on different substrates. Under compressive strain, F tends to take the apical-like sites, which was revealed by F and O K-edge linearly polarized x-ray absorption spectroscopy and density functional theory calculations, resulting in an enhanced c-axis expansion. Under tensile strain, F tends to take the equatorial-like sites, enabling the longer Mn-F bonds to lie within the plane. The anion ordered oxyfluoride films exhibit a significant orbital polarization of the 3d electrons, distinct F-site dependence to their valence band density of states, and an enhanced resistivity when F occupies the apical-like anion site compared to the equatorial-like site. By demonstrating a general strategy for inducing anion-site order in oxyfluoride perovskites, this work lays the foundation for future materials design and synthesis efforts that leverage this greater degree of atomic control to realize new polar or quasi-two-dimensional materials.

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