论文标题
可调电子属性和大型rashba分割，在几层BI $ _2 $ SE $ _3 $/ptse $ _2 $ van der wa waals异质结构
Tunable Electronic Properties and Large Rashba Splittings Found in Few-Layer Bi$_2$Se$_3$/PtSe$_2$ Van der Waals Heterostructures
论文作者
论文摘要
我们使用第一原理计算来表明范德华（VDW）异质结构由几层BI $ _2 $ _2 $ SE $ _3 $和PTSE $ _2 $组成，展示了电子和SpinTronics属性，可以通过不同的构成层来调节。已经发现了具有层可 - 可调的带隙和III II型带对齐方式的II型频带对准带有自旋切割的型。最值得注意的是，我们揭示了Rashba型旋转式分解的共存（带有$α_ {\ rm rm r} $参数）在传导和价带中的共存是由很少的bi $ _2 $ _2 $ SE $ _3 $ _3 $和PTSE $ _2 $的，分别确认了由Spin-spin-textextextextextextextextextextextextextextextextextextextextextextextextextext，我们讨论了反转对称性破坏，轨道杂交的变化和自旋轨道耦合在更改费米水平附近的电子分散体中的作用。由于两种材料都可以使用低温增长机制，因此我们认为，很少的BI $ _2 $ SE $ _3 $/PTSE $ _2 $ _2 $ VDW异质结构是可行的，可以实现实验，为电子和SpinTronics应用提供巨大的潜力。
We use first-principles calculations to show that van der Waals (vdW) heterostructures consisting of few-layer Bi$_2$Se$_3$ and PtSe$_2$ exhibit electronic and spintronics properties that can be tuned by varying the constituent layers. Type-II band alignment with layer-tunable band gaps and type-III band alignment with spin-splittings have been found. Most noticeably, we reveal the coexistence of Rashba-type spin-splittings (with large $α_{\rm R}$ parameters) in both the conduction and valence band stemming from few-layer Bi$_2$Se$_3$ and PtSe$_2$, respectively, which has been confirmed by spin-texture plots. We discuss the role of inversion symmetry breaking, changes in orbital hybridization and spin-orbit coupling in altering electronic dispersion near the Fermi level. Since low-temperature growth mechanisms are available for both materials, we believe that few-layer Bi$_2$Se$_3$/PtSe$_2$ vdW heterostructures are feasible to realize experimentally, offering great potential for electronic and spintronics applications.
