论文标题
基于HGTE的拓扑绝缘子
Topological insulators based on HgTe
论文作者
论文摘要
综述了基于HGTE量子井和膜的2D和3D拓扑绝缘子（TIS）的最有趣的实验结果。在2D TIS的情况下，这些包括观察非局部弹道和扩散转运的观察，2D TI的磁故障以及边缘通道电阻的异常温度依赖性。在3D TI中，已经达到了表面二维Dirac Fermions（DFS）的创纪录的高迁移率。这使得确定所有主要TI参数（在其两个表面上的散装间隙和DFS的密度），并提供了有关DFS的Shubnikov -de HAAS振荡的信息，这表明FERMION SPIN和MOKMIN SPIM和动量之间的刚性拓扑结构。在结论中讨论了进一步研究的前景。
The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility of surface two-dimensional Dirac fermions (DFs) has been attained. This enabled determining all the main TI parameters (the bulk gap and the density of DFs on both of its surfaces) and provided information on the phase of the Shubnikov - de Haas oscillations of DFs, which indicates the rigid topological coupling between the fermion spin and momentum. Prospects for further research are discussed in the conclusion.
