论文标题
高梯度碳化物浸入式透镜超快电子源
High Gradient Silicon Carbide Immersion Lens Ultrafast Electron Sources
论文作者
论文摘要
我们提供了两种紧凑型超快电子喷射器设计，具有集成的焦点，可提供高达$ 1.9*10^{12} a/m^2sr^2 $的高峰值亮度，并使用硅碳化物电极和硅纳米发射器，每个激光脉冲10s且每激光脉冲10s。我们展示了几厘米的96 keV浸入透镜电子源和57 KEV浸入式镜头电子源，其平均加速度为19 kV/mm，几乎是DC电子源中使用的典型10 kV/mm的两倍。电子源的亮度与起始到末端模拟（包括空间电荷效应）一起测量。这些来源适用于介电激光加速器实验，超快电子衍射以及其他需要紧凑的高亮度电子源的应用。
We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to $1.9*10^{12} A/m^2Sr^2$ with 10s of electrons per laser pulse using silicon carbide electrodes and silicon nanotip emitters. We demonstrate a few centimeter scale 96 keV immersion lens electron source and a 57 keV immersion lens electron source with a 19 kV/mm average acceleration gradient, nearly double the typical 10 kV/mm used in DC electron sources. The brightness of the electron sources is measured alongside start-to-end simulations including space charge effects. These sources are suitable for dielectric laser accelerator experiments, ultrafast electron diffraction, and other applications where a compact high brightness electron source is required.
