论文标题
通过与短层WTE2接口，增强石榴石铁磁铁中的垂直磁各向异性
Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe2
论文作者
论文摘要
铁磁或铁磁性（FM）薄膜中的工程磁各向异性在Spintronic设备中至关重要。修饰磁各向异性的一种方法是通过FM薄膜的表面。在这里，我们报告了由石榴石费里马格内特（Garnet Ferrimagnet），Y3Fe5O12（YIG）和低对称性，高旋转Orbit（Soc）过渡金属二十甲级二十甲基二十核基生力基因介质的异质结构中引起的垂直磁各向异性（PMA）的出现。同时，我们还观察到WTE2覆盖的YIG地区的Gilbert阻尼的增强。界面诱导的PMA的大小和吉尔伯特阻尼增强的大小都没有可观察到的WTE2厚度依赖性降低到单个四层层，这表明界面相互作用起着关键作用。 WTE2在FM薄膜中增强PMA的能力，再加上其先前报道的能力产生平面外阻尼（如旋转扭矩），这使得它对于磁性内存应用所需。
Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and the low-symmetry, high spin orbit coupling (SOC) transition metal dichalcogenide, WTe2. At the same time, we also observed an enhancement in Gilbert damping in the WTe2 covered YIG area. Both the magnitude of interface-induced PMA and the Gilbert damping enhancement have no observable WTe2 thickness dependence down to single quadruple-layer, indicating that the interfacial interaction plays a critical role. The ability of WTe2 to enhance the PMA in FM thin film, combined with its previously reported capability to generate out-of-plane damping like spin torque, makes it desirable for magnetic memory applications.
