论文标题
BI2201中的Planckian耗散和非Ginzburg-Landau型上临界领域
Planckian Dissipation and non-Ginzburg-Landau Type Upper Critical Field in Bi2201
论文作者
论文摘要
在高磁场下，在低温下至0.4 K的BI2201单晶微型桥上进行了电阻率和霍尔效应测量。当超导率被高磁场崩溃时，恢复的“正常状态”电阻率仍然显示出低温区域的线性温度依赖性。结合有效质量和电荷载体密度，我们获得了线性散射率$ 1/τ=αk_{b} t/\ hbar $，$ 0.77 <α<1.16 $，这给出了普朗基耗散的有力证据。此外，我们的结果揭示了上层临界场的一种新型温度依赖性，$ h_ {c2}（t）= h^*\ sqrt {（1-t）/（t+0.154）} $完全不同，这与金斯堡 - 兰达理论的期望完全不同，并建议了$ hepaiks $ h_________} $ h_______2}（T）。
Resistivity and Hall effect measurements have been carried out on a micro-fabricated bridge of Bi2201 single crystal at low temperatures down to 0.4 K under high magnetic fields. When superconductivity is crashed by a high magnetic field, the recovered "normal state" resistivity still shows a linear temperature dependence in low temperature region. Combining with the effective mass and the charge carrier density, we get a linear scattering rate $1/τ= αk_{B} T/\hbar$ with $0.77<α<1.16$, which gives a strong evidence of the Planckian dissipation. Furthermore, our results reveal a new type of temperature dependence of upper critical field, $H_{c2}(T)=H^*\sqrt{(1-t)/(t+0.154)}$, which is totally different from the expectation of the Ginzburg-Landau theory, and suggests uncondensed Cooper pairs above $H_{c2}(T)$ line.
