论文标题
对变形晶体中扩展缺陷的X射线线程验证分析的验证
Validation of x-ray line-profile analysis of extended defects in deformed crystals
论文作者
论文摘要
晶体材料中扩展缺陷的定量测量对于理解材料行为很重要。 X射线线轮廓分析提供了电子显微镜中直接计数的补充，但是一种间接方法，需要验证。先前的研究重点是将X射线分析与电子显微镜结果进行比较。取而代之的是，我们使用具有已知缺陷含量的模拟有缺陷材料，并将线概况分析应用于计算的衍射概况，以直接表明线概况分析可以可靠地量化位错和堆叠故障。
Quantitative measurements of extended defects in crystalline materials are important in understanding material behaviour. X-ray line profile analysis provides a complement to direct counting in the electron microscope, but is an indirect method and requires validation. Previous studies have focused on comparing x-ray analysis to electron microscopy results. Instead, we use simulated defective material with known defect content and apply line profile analysis to calculated diffraction profiles to directly show that line profile analysis can reliably quantify dislocations and stacking faults.
