论文标题
氮对等离子体下垂直石墨烯纳米片生长的影响
Influence of nitrogen on the growth of vertical graphene nanosheets under plasma
论文作者
论文摘要
我们已经研究了氮（N2）作为载气对血浆增强化学蒸气沉积（PECVD）垂直石墨烯纳米片（VGN）生长的影响。已经证明，在碳氢化合物前体中添加氮气可以提高石墨基层层和垂直片的成核和生长速率。气体还同时充当蚀刻剂和掺杂元素。垂直纸的密度增加到一定极限，并随着N2浓度的进一步增加而开始减小。合成的VGN表现出0.89至1.89kΩ/sq的电阻。根据载体浓度的形态和类型，从8.05到20.14 cm2/v-s的迁移率。这些结果表明，VGN的表面形态和电子特性可以通过在生长阶段掺入氮气来调整。
We have investigated the effect of nitrogen (N2) as a carrier gas on the growth of vertical graphene nanosheets (VGN) by plasma enhanced chemical vapor deposition (PECVD). It is demonstrated that addition of nitrogen gas with a hydrocarbon precursor can enhance the nucleation and growth rate of graphitic base layer as well as vertical sheets. The gas also simultaneously acts as an etchant and a dopant element. The density of vertical sheets increases up to certain limit and start to decrease with further increase in N2 concentration. The synthesized VGN exhibit sheet resistance from 0.89 to 1.89 KΩ/sq. and mobility from 8.05 to 20.14 cm2/V-s, depending on the morphology and type of carrier concentration. These results reveal that the surface morphology and electronic properties of VGN can be tuned by incorporation of nitrogen gas during the growth phase.
