论文标题
通过CAH 2退火方法，连续掺杂BI 2 SR 2 SR 2 CACU 2 O 8+δ进入电子掺杂的超导体
Continuously Doping Bi 2 Sr 2 CaCu 2 O 8+δ into Electron-Doped Superconductor by CaH 2 Annealing Method
论文作者
论文摘要
作为典型的孔掺杂库层超导体，BI 2 SR 2 CACU 2 O 8+δ（BI2212）载体掺杂主要由其氧气含量确定。传统的掺杂方法可以调节其掺杂范围内的掺杂水平。在这里，我们报告了CAH 2退火方法在调节BI2212的掺杂水平中的第一个应用。通过连续控制退火时间，可以获得一系列不同的掺杂样品。 X射线衍射，扫描透射电子显微镜，电阻和HALL测量结果的结合实验结果表明，CAH 2诱导的拓扑拓扑反应可以有效地改变BI2212在非常广泛的范围内的BI2212的氧气含量，甚至从孔掺杂到电子掺杂。我们还发现了电子掺杂侧的低T C超导阶段的证据。
As a typical hole-doped cuprate superconductor, Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) carrier doping is mostly determined by its oxygen content. Traditional doping methods can regulate its doping level within the range of hole doping. Here we report the first application of CaH 2 annealing method in regulating the doping level of Bi2212. By continuously controlling the anneal time, a series of differently doped samples can be obtained. The combined experimental results of x-ray diffraction, scanning transmission electron microscopy, resistance and Hall measurements demonstrate that the CaH 2 induced topochemical reaction can effectively change the oxygen content of Bi2212 within a very wide range, even switching from hole doping to electron doping. We also found evidence of a low-T c superconducting phase in the electron doping side.
