论文标题
二氧化物中的辫子侧形晶界
Braiding lateral morphotropic grain boundary in homogeneitic oxides
论文作者
论文摘要
由相关氧化物形成的接口为发现新兴现象和量子状态提供了关键的途径。然而,通过沿膜平面积分的可变晶体学方向和应变状态的氧化物界面的制造是极为挑战的,这对于常规的逐层堆叠或自组装而言。在这里,我们报告了横向相互联系的钴矿构体中形态晶界(GB)的创建。单晶底物和悬浮的超薄独立膜为连贯的外观和生长方向的约束提供独立的模板,从而导致无缝和原子尖锐的GBS。杂化结构中的电子状态和磁性行为是通过GBS横向调节和分离的,可以在平面基质中进行人工设计的功能。我们的工作提供了一种简单可扩展的方法,用于通过受控的合成路线制造前所未有的创新界面,并为探索神经形态,固态电池和催化的潜在应用提供了一个平台。
Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis.