论文标题
$ \ mathrm {srtio_3} $中的工程表面氧空位，形成高移动性和透明的准二维电子系统
Engineering Surface Oxygen Vacancies in $\mathrm{SrTiO_3}$ to Form a High Mobility and Transparent Quasi Two dimensional Electron System
论文作者
论文摘要
准二维电子系统（Q-2DES）在包括氧化物界面在内的各种异质结构中形成。已知氧化物中的氧气空位（OVS），例如$ \ mathrm {srtio_3} $产生电子载体。这里显示了一种新颖的方法，用于在此处显示出使用低能量$ \ mathrm {h_2} $ plasma在表面上在表面上在表面上产生$ \ mathrm {srtio_ {3-Δ}} $的新颖方法。它导致移动性高达$μ\ sim 20,000 \的Q-2DE \; cm^2v^{ - 1} s^{ - 1} $，在磁耐药中显示量子振荡。我们可以通过调节过程压力来实现更清晰或较弱的限制潜力。带有更清晰的系统的系统显示出更清晰的量子振荡和抗Kondo样温度依赖性。靠近表面的OV行为像相关的Anderson杂质是造成近代行为的原因。量子振荡在弱关闭系统中不太明显。可以看到从弱关闭到抗本地化的跨越温度的交叉，但没有临床行为。该过程还导致透明的导体适合光刻图案。该导体的标准功绩符合可见性策略中的多元结晶ITO膜可媲美，并以相似的性能扩展到$λ$ $ \ sim 1.5 $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $。
Quasi-two-dimensional electron systems (q-2DES) are formed in various hetero-structures, including oxide interfaces. Oxygen vacancies (OVs) in oxides like $\mathrm{SrTiO_3}$ are known to produce electronic carriers. A novel way to produce $\mathrm{SrTiO_{3-δ}}$ on the surface using a low-energy $\mathrm{H_2}$ plasma is shown here. It results in a q-2DES with mobility as high as $μ\sim 20,000 \; cm^2V^{-1}s^{-1}$, displaying quantum oscillations in magneto-resistance. We can achieve a sharper or weaker confinement potential by adjusting the process pressure. The system with sharper confinement displays clearer quantum oscillations and Kondo-like temperature dependence of resistance. OVs close to the surface behaving like a correlated Anderson impurity is responsible for the Kondo behaviour. Quantum oscillations are less prominent in the weakly confined system. A cross-over from weak-localization to anti-localization with temperature is seen, but no Kondo behavior. The process also results in a transparent conductor amenable to lithographic patterning. This conductor's standard figure of merit is comparable to poly-crystalline ITO films in the visible regime and extends with similar performance into the $λ$ $\sim 1.5$ $μm$ telecommunication wavelength.
