论文标题
v $ _3 $ s $ _4 $的单晶合成和低洼电子结构
Single crystal synthesis and low-lying electronic structure of V$_3$S$_4$
论文作者
论文摘要
我们报告了V $ _3 $ S $ _4 $的毫米大小的高质量单晶的成功增长，这是一个属于低对称空间组的候选拓扑半学，仅由低原子数元素组成。使用密度功能理论计算和角度分辨的光发射光谱法，我们表明单斜胶的非磁性阶段V $ _3 $ _3 $ s $ _4 $ hosts type-ii dirac样的准粒子类似于旋转孔的差异，从而打开了可观的差距，这些差距也因自旋术语而导致的多个Nodal coupling以及理论上的多个Nodal cow coupl或Bit。这些结果表明，即使在具有低重量元素的化合物中，相对论效应也会引起拓扑特性的深刻修改。
We report successful growth of millimeter-sized high quality single crystals of V$_3$S$_4$, a candidate topological semimetal belonging to a low-symmetry space group and consisting of only low atomic number elements. Using density functional theory calculations and angle-resolved photoemission spectroscopy, we show that the nonmagnetic phase of monoclinic V$_3$S$_4$ hosts type-II Dirac-like quasiparticles which opens a sizable gap due to spin orbit coupling, as well as theoretical multiple nodal lines that are eliminated also by spin orbit coupling. These results suggest that relativistic effects give rise to profound modifications of the topological properties even in compounds with low-weight elements.
