论文标题

固有磁性拓扑量绝缘子中的异常Landau量化

Anomalous Landau quantization in intrinsic magnetic topological insulators

论文作者

Chong, Su Kong, Lei, Chao, Lee, Seng Huat, Jaroszynski, Jan, Mao, Zhiqiang, MacDonald, Allan H., Wang, Kang L.

论文摘要

内在的磁性绝缘体MN(BI1-XSBX)2TE4在其自旋对齐的强场合作中已被鉴定为单对Weyl Nodes1-4的Weyl Semimetal。 Weyl态的直接结果是薄膜量化中层依赖性的Chern数(C)。 MNBI2TE4薄膜中的先前报道表明,通过增加膜厚度5或将化学势控制到电子掺杂6-8中,可以显示自旋对齐中的较高的C状态。由于磁场中的表面带Landau级别(LLS)的出现使情况变得复杂,因此较高的Chern状态的清晰图像仍然缺失。在这里,我们通过对Mn(BI1-XSBX)2TE4双重设备中的量化状态进行详细分析,报告了具有C = 1状态的可调层依赖性层,与SB取代。在薄膜磁性绝缘体中,可以从表面和大量的自旋极光化的Landau水平谱图中解释观察到的霍尔量化高原(BI1-XSBX)2TE4膜。我们的结果表明,MN(BI1-XSBX)2TE4薄膜为探测对磁性敏感的异常Landau量化物理的高度可调平台。

The intrinsic magnetic topological insulators, Mn(Bi1-xSbx)2Te4, in their spin-aligned strong field configuration have been identified as a Weyl semimetal with single pair of Weyl nodes1-4. A direct consequence of the Weyl state is the layer-dependent Chern number (C) in thin film quantization. Previous reports in MnBi2Te4 thin films revealed the higher C states in the spin alignment by either increasing the film thickness5 or controlling chemical potential into electron doping6-8. A clear picture of the higher Chern states is still missing as the situation is complicated by the emerging of surface band Landau levels (LLs) in magnetic field. Here, we report a tunable layer-dependent of C= 1 state with the Sb substitutions by performing a detailed analysis of the quantization states in Mn(Bi1-xSbx)2Te4 dualgated devices, consistent with the calculations of the bulk Weyl point separations in the compounds. The observed Hall quantization plateaus for our thicker Mn(Bi1-xSbx)2Te4 films under strong magnetic fields can be interpreted from a theory of surface and bulk spin-polarized Landau levels spectrum in thin film magnetic topological insulators. Our results demonstrate that Mn(Bi1-xSbx)2Te4 thin films provide a highly tunable platform for probing the physics of the anomalous Landau quantization that is strongly sensitive to magnetic order.

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