论文标题

基于COFEB/MGO的交界处的对称性隧道,界面氧化和垂直磁各向异性的相互作用

Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions

论文作者

Khanal, Pravin, Zhou, Bowei, Almasi, Hamid, Habiboglu, Ali, Andrade, Magda, O'Brien, Jack, Enriquez, Arthur, Eckel, Carter, Mastrangelo, Christopher, Wang, Wei-Gang

论文摘要

研究了基于MGO的垂直磁性隧道连接的界面氧化水平和热力学特性。对称性的隧道效应敏感地取决于RF溅射过程中MGO ADATOM能量,以及在生长后的热退火过程中结构的热稳定性。突出显示了磁倍率的两种不同的故障模式,分别涉及垂直磁各向异性的衰减和相干隧道通道的破坏。通过仔细控制界面氧化水平和重金属层的正确选择,可以增加垂直磁各向异性和连接处的隧穿磁磁性。

The interfacial oxidation level and thermodynamic properties of the MgO-based perpendicular magnetic tunneling junctions are investigated. The symmetry-conserved tunneling effect depends sensitively on the MgO adatom energy during the RF sputtering, as well as the thermal stability of the structure during the post-growth thermal annealing. Two different failure modes of the magnetoresistance are highlighted, involving with the decay of perpendicular magnetic anisotropy and destruction of coherent tunneling channels, respectively. Through the careful control of interfacial oxidation level and proper selection of the heavy metal layers, both perpendicular magnetic anisotropy and tunneling magnetoresistance of the junctions can be increased.

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