论文标题
基于GAN的光发射二极管的仿真，结合了组成波动效应
Simulation of GaN-Based Light Emitting Diodes Incorporating Composition Fluctuation Effects
论文作者
论文摘要
III二硝酸盐发射二极管（LED）广泛用于一系列高效率照明和显示应用，这些应用在过去十年中可以节省大量能源。尽管GAN LED的应用很广，但这些设备中Ingan/GAN异质结构的运输机制尚未得到很好的解释。 INGAN/GAN界面处的固定极化板电荷导致较大的界面偶极子电荷，从而产生了较大的潜在障碍。跨这样的异质结构运输的一维模型预测的转交电压明显高于实际设备中的电压。结果，传统的运输模型无法预测新设计的性能，例如更长的波长LED或多量器井LED。在这项工作中，我们表明，在亚微米量表中掺入量子井中的低含量和高依赖组合物可以准确预测Gan/Ingan光发射二极管的特征。
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport mechanisms across InGaN/GaN heterostructures in these devices are not well-explained. Fixed polarization sheet charges at InGaN/GaN interfaces lead to large interface dipole charges, which create large potential barriers to overcome. One-dimensional models for transport across such heterostructures predict turn-on voltages that are significantly higher than that found in real devices. As a result, conventional models for transport cannot predict the performance of new designs such as for longer wavelength LEDs, or for multi-quantum well LEDs. In this work, we show that incorporating low and high Indium compositions within quantum wells at the submicron scale can provide accurate prediction of the characteristics of GaN/InGaN light emitting diodes.
