论文标题
Janus黑色砷磷的电子特性（B-ASP）在横向电场下的纳米管
Electronic properties of Janus black arsenic-phosphorus (b-AsP) nanoribbons under transverse electric field
论文作者
论文摘要
Janus单层黑砷磷（B-ASP）的电子传输性能已通过紧密结合方法研究了。电子结构对边缘结构的依赖性进行了系统的研究。 （1,3）NB和（3,1）NB B-ASP纳米骨本术比曲折和扶手椅的边缘表现出更平坦的边缘。扶手椅的边缘表现出双重变性。此外，计算出的结果表明，具有不同边界形态的曲折色带的带隙可以通过横向电场广泛调节。关键的电场可以完全缩小间隙，并诱导从半导体转变为导体。我们的工作表明在Janus B-Asp纳米宾中动态可调的带隙，并揭示了Janus B-Asp对传输设备的潜力。
The electronic transport properties of Janus monolayer black arsenic phosphorus (b-AsP) nanoribbons have been investigated utilizing the tight-binding approach. The dependence of electronic structure on edge structures is systematically investigated. (1,3)nb and (3,1)nb b-AsP nanoribbons exhibit flatter edge bands than zigzag and armchair counterparts. The edge band of the armchair ones show double degeneracy. Further, the calculated results show the band gap of the zigzag ribbon with different boundary morphology is widely tunable by transverse electric field. A critical electric field can fully close the gap and induce a phase transition from a semiconductor into a conductor. Our work suggests dynamically tunable bandgap in Janus b-AsP nanoribbons and reveals the potential of Janus b-AsP for transmission devices.
