论文标题
在Moiré量子异常的绝缘子中可视化和操纵手性界面状态
Visualizing and manipulating chiral interface states in a moiré quantum anomalous Hall insulator
论文作者
论文摘要
由堆叠的二维材料制成的Moiré系统可通过施加的栅极电压进行电气控制的新型相关状态和拓扑状态。我们已经使用了这种技术来操纵由扭曲的单层 - 双层石墨烯(TMBLG)制成的相互作用量子异常霍尔绝缘子中的Chern域。这使手性界面状态的波函数可以使用扫描隧道显微镜(STM)直接成像。为了实现此TMBLG载体的浓度以稳定相反的Chern数量的相邻域,从而提供了完全没有任何结构边界的拓扑接口。使用STM尖端脉冲诱导的量子点诱导新的Chern域,从而在预定位置创建具有可调性手性的新手性界面状态。理论分析证实了观察到的界面状态的手性质,并能够确定跨相邻TMBLG Chern域的山谷极化反转的特征长度尺度。 TMBLG被证明是对相关Moiré系统的外来拓扑特性进行成像的有用平台。
Moiré systems made from stacked two-dimensional materials host novel correlated and topological states that can be electrically controlled via applied gate voltages. We have used this technique to manipulate Chern domains in an interaction-driven quantum anomalous Hall insulator made from twisted monolayer-bilayer graphene (tMBLG). This has allowed the wavefunction of chiral interface states to be directly imaged using a scanning tunneling microscope (STM). To accomplish this tMBLG carrier concentration was tuned to stabilize neighboring domains of opposite Chern number, thus providing topological interfaces completely devoid of any structural boundaries. STM tip pulse-induced quantum dots were utilized to induce new Chern domains and thereby create new chiral interface states with tunable chirality at predetermined locations. Theoretical analysis confirms the chiral nature of observed interface states and enables the determination of the characteristic length scale of valley polarization reversal across neighboring tMBLG Chern domains. tMBLG is shown to be a useful platform for imaging the exotic topological properties of correlated moiré systems.