论文标题
双线性平面厅在拓扑绝缘子中的双线性平面效应，这是由于自旋锁定锁定不均匀性
Bilinear planar Hall effect in topological insulators due to spin-momentum locking inhomogeneity
论文作者
论文摘要
我们研究了自旋摩肌锁定不均匀性对拓扑绝缘体（TIS）中平面霍尔效应的影响。使用描述3D TIS和半经典玻尔兹曼形式的表面状态的最小模型，我们在广义的松弛时间近似中得出了平面霍尔电导率。我们发现，总平面霍尔电导率是外部电场成分的线性和非线性的总和。线性术语是一种常规的平面霍尔电导率，它用外部磁场四四范围，而非线性术语揭示了双线性行为，即当电荷电流密度或平面磁场方向相反时，它会改变其符号。我们已经表明，紧急的非线性平面霍尔效应是旋转摩托锁定的结果，其在TIS中具有各向同性能量分散，并在常规的平面霍尔效应下占主导地位。
We study the effect of spin-momentum locking inhomogeneity on the planar Hall effect in topological insulators (TIs). Using the minimal model describing surface states of 3D TIs and semiclassical Boltzmann formalism, we have derived the planar Hall conductivity within the generalized relaxation time approximation. We have found that the total planar Hall conductivity is a sum of linear and nonlinear to the external electric field components. The linear term is a conventional planar Hall conductivity which scales quadratically with an external magnetic field, whereas the nonlinear term reveals bilinear behaviour, i.e., changes its sign when either charge current density or in-plane magnetic field orientation is reversed. We have shown that the emergent nonlinear planar Hall effect is a consequence of spin-momentum locking inhomogeneity in the TIs with isotropic energy dispersion and dominates under the conventional planar Hall effect.
