论文标题
拓扑绝缘子和量子点的系统中随机自旋轨道门
Random spin-orbit gates in the system of a Topological insulator and a Quantum dot
论文作者
论文摘要
研究了拓扑绝缘子和量子点系统中的自旋依赖性散射过程。统一散射过程被视为应用于两个电子的初始状态的栅极变换。由于通过杂质和谱带参数的合金诱导的效应施加的随机性，因此实施了随机统一门的形式。为了量化系统中的纠缠，我们探索了并发和合奏平均的Rényi熵。我们发现，应用的外部磁场会导致距离长度大得多的距离。我们表明，巡回电子的拓扑特征维持了坚固的长距离纠缠的形成，即使在存在牢固的疾病的情况下，它也能生存下来。
The spin-dependent scattering process in a system of topological insulator and quantum dot is studied. The unitary scattering process is viewed as a gate transformation applied to an initial state of two electrons. Due to the randomness imposed through the impurities and alloying-induced effects of band parameters, the formalism of the random unitary gates is implemented. For quantifying entanglement in the system, we explored concurrence and ensemble-averaged Rényi entropy. We found that applied external magnetic field leads to long-range entanglement on the distances much larger than the confinement length. We showed that topological features of itinerant electrons sustain the formation of robust long-distance entanglement, which survives even in the presence of a strong disorder.
