论文标题
两波段模型分析在揭幕温度驱动的LIFSHITITION中的磁化率分析
Unreliability of two-band model analysis of magnetoresistivities in unveiling temperature-driven Lifshitz transition
论文作者
论文摘要
最近,使用常规的两波段模型对载体密度的温度依赖性和/或移动性的温度依赖性异常,用于公布各种材料中引人入胜的温度引起的LIFSHITZ跃迁。 For instance, two temperature-driven Lifshitz transitions were inferred to exist in the Dirac nodal-line semimetal ZrSiSe, based on two-band model analysis of the Hall magnetoconductivities where the second band exhibits a change in the carrier type from holes to electrons when the temperature decreases below T = 106 K and a dip is observed in the mobility versus temperature curve at T = 80 K. Here, we revisit the experiments以及ZRSISE的两波段模型分析。我们表明,第二个频段中的异常可能是虚假的,因为第一个频段在t> 80 K处占主导地位的霍尔磁性,这使得从两波段模型分析中为第二个频段获得的载体类型和迁移率不可靠。也就是说,必须注意将这些异常解释为温度驱动的Lifshitz过渡的证据。我们对Zrsise中这种相位过渡的存在的怀疑,这进一步支持了科勒在低于180 K的温度下对磁倍率的规则的验证。这项工作表明了在载载密度和迁移率的温度依赖性中解释异常的潜在问题,该分析来自磁导率或巨麦克通道的分析。
Recently, anomalies in the temperature dependences of the carrier density and/or mobility derived from analysis of the magnetoresistivities using the conventional two-band model have been used to unveil intriguing temperature-induced Lifshitz transitions in various materials. For instance, two temperature-driven Lifshitz transitions were inferred to exist in the Dirac nodal-line semimetal ZrSiSe, based on two-band model analysis of the Hall magnetoconductivities where the second band exhibits a change in the carrier type from holes to electrons when the temperature decreases below T = 106 K and a dip is observed in the mobility versus temperature curve at T = 80 K. Here, we revisit the experiments and two-band model analysis on ZrSiSe. We show that the anomalies in the second band may be spurious, because the first band dominates the Hall magnetoconductivities at T > 80 K, making the carrier type and mobility obtained for the second band from the two-band model analysis unreliable. That is, care must be taken in interpreting these anomalies as evidences for temperature-driven Lifshitz transitions. Our skepticism on the existence of such phase transitions in ZrSiSe is further supported by the validation of the Kohler's rule for magnetoresistances at temperatures below 180 K. This work showcases potential issues in interpreting anomalies in the temperature dependence of the carrier density and mobility derived from the analysis of magnetoconductivities or magnetoresistivities using the conventional two-band model.