论文标题
INSB（111）B上具有分形表面结构的2D拓扑材料BI的生长
Growth of 2D topological material Bi on InSb(111)B with fractal surface structures
论文作者
论文摘要
根据堆叠层的数量，二晶型原子层被称为2D拓扑材料，具有多种电子结构和拓扑顺序。最近，据报道，在半导体底物INSB上生长的BI层（111）B在表面上显示了Sierpiński-Triangle（ST）分形图案。在这项工作中，我们在INSB（111）B上种植了BI层，并追踪了BI的原子和电子结构的演变。通过使用反射性高能电子衍射和核心光电子光谱法监测表面原子结构和生长模式。建议ST相BI的单层在INSB上生长（111）B（111）B，以下BI沉积会导致逐层生长，直到名义上为4个原子层。通过角度分辨光电子光谱观察到的弥散带分散和量子井状态也与小的表面结构域和厚度的变化一致，即使在逐层生长区域内也是一致的。进一步的BI蒸发将生长模式变为3D岛形成。 BI在INSB（111）B上的揭开生长行为将提供一个新的有趣的操场，以研究准周期2D原子层的2D拓扑电子结构。
Bismuth (Bi) atomic layers are known as 2D topological materials with variety of the electronic structures and topological orders depending on the number of stacking layers. Recently, it is reported that few layers of Bi grown on semiconductor substrate InSb(111)B exhibit the Sierpiński-triangle (ST) fractal patterns on the surface. In this work, we have grown Bi layers on InSb(111)B and traced the evolution of the atomic and electronic structures of Bi. The surface atomic structures and growth modes were monitored by using reflective high-energy electron diffraction and core-level photoelectron spectroscopy. It is suggested that the single layer of the ST-phase Bi grows on InSb(111)B and the following Bi deposition causes layer-by-layer growth up to nominally 4 atomic layers. Diffuse band dispersion and quantum well states observed by angle-resolved photoelectron spectroscopy are consistent with the small surface domains and variation of the thickness even during the layer-by-layer growth region. The further Bi evaporation changes the growth mode to the 3D island formation. The unveiled growth behavior of Bi on InSb(111)B would provide a new interesting playground to study 2D topological electronic structure of quasi-periodic 2D atomic layers.
